A DC Model for Partially Depleted SOI Laterally Diffused MOSFETs Utilizing the HiSIM-HV Compact Model

This paper presents a subcircuit compact model to study the dc characteristics of a partially depleted (PD) SOI laterally diffused metal oxide semiconductor field effect transistor (LDMOSFET) utilizing the HiSIM-HV compact model. Our model accounts both for the high-voltage and the floating-body effects such as the quasi saturation effect, the impact ionization in the drift region and the famous kink effect. The high-voltage effects, due to the surface MOS region of PD SOI LDMOSFET, are modeled using the HiSIMHV model. The HiSIM-HV model, a surface-pote-ntialbased compact model, is used as a baseline model as it determines the potential consistently in the complete PD SOI LDMOSFET. And, to incorporate the floating-body effects into the HiSIM-HVmodel, we have used the same approach as used in developing BSIMSOI model. It is shown that to model the floating-body effects, mainly the kink in the output characteristics, the current due to the impact ionization in the drift region (IKIRK) needs to be accurately modeled. An external current controlled current source (CCCS) is included in the proposed subcircuit model to model IKIRK accurately. The model is validated for a set of channel and drift lengths to demonstrate the scalability of the model. The accuracy of the proposed subcircuit model is verified using 2-D numerical simulations.